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STGW39NC60VD
N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESHTM IGBT
TARGET SPECIFICATION
Table 1: General Features
TYPE STGW39NC60VD

Figure 1: Package
IC @100C 40 A
VCES VCE(sat) (Max) @25C 600V < 2.5 V

HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION
3 2 1
TO-247
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency.
Figure 2: Internal Schematic Diagram
APPLICATIONS HIGH FREQUENCY INVERTERS SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES UPS MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE STGW39NC60VD MARKING GW39NC60VD PACKAGE TO-247 PACKAGING TUBE
Rev. 1 November 2005
This is a preliminary information on a new product now in development. Details are subject to change without notice.
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Table 3: Absolute Maximum ratings
Symbol VCES VECR VGE IC IC ICM (1) If PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25C (#) Collector Current (continuous) at 100C (#) Collector Current (pulsed) Diode RMS Forward Current at Tc = 25C Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 20 70 40 100 40 215 1.72 - 55 to 150 Unit V V V A A A A W W/C C
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min. Rthj-case Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-case (Diode) Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 Typ. Max. 0.58 1.5 50 Unit C/W C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Off
Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 1mA, VGE = 0 VGE = Max Rating, Tc=25C Tc=125C VGE = 20V , VCE = 0 Min. 600 10 1 100 Typ. Max. Unit V A mA nA
Table 6: On
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE= VGE, IC= 250A VGE= 15V, IC= 30A, Tj= 25C VGE= 15V, IC= 30A, Tj= 125C Min. 3.75 1.8 1.7 Typ. Max. 5.75 2.5 Unit V V V
(#) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( M AX ) C C
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs(1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current Test Conditions VCE = 15V, IC= 30A VCE = 25V, f = 1MHz, VGE = 0 Min. Typ. TBD TBD TBD TBD TBD TBD TBD 200 Max. Unit S pF pF pF nC nC nC A
VCE = 390V, IC = 30A, VGE = 15V, (see Figure 5) Vclamp = 480V , Tj = 150C RG = 100, VGE= 15V
Table 8: Switching On
Symbol td(on) tr (di/dt)on Eon (2) td(on) tr (di/dt)on Eon (2) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 390V, IC = 30A RG= 3.3, VGE= 15V, Tj= 25C (see Figure 3) VCC = 390V, IC = 30A RG= 3.3, VGE= 15V,Tj= 125C (see Figure 3) Min. Typ. TBD TBD TBD TBD TBD TBD TBD TBD Max. Unit ns ns A/s J ns ns A/s J
TBD
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C)
Table 9: Switching Off
Symbol tr(Voff) td(off) tf Eoff (3) Ets tr(Voff) td(off) tf Eoff (3) Ets Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 390V, IC = 30A, RGE = 3.3 , VGE = 15V Tj = 125C (see Figure 3) Test Conditions Vcc = 390V, IC = 30A, RGE = 3.3 , VGE = 15V TJ = 25C (see Figure 3) Min. Typ. TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Unit ns ns ns
J J
ns ns ns
J J
(3)Turn-off losses include also the tail of the collector current.
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Table 10: Collector-Emitter Diode
Symbol Vf trr ta Qrr Irrm S trr ta Qrr Irrm S Parameter Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Test Conditions If = 30A If = 30A, Tj = 125C If = 30A ,VR = 40V, Tj = 25C, di/dt = 100A/s (see Figure 6) Min. Typ. 1.4 1.1 44 32 66 3 0.375 88 56 237 5.4 0.57 Max. 2.1 Unit V V ns ns nC A ns ns nC A
If = 30A ,VR = 40V, Tj =125C, di/dt = 100A/s (see Figure 6)
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Figure 3: Test Circuit for Inductive Load Switching Figure 5: Gate Charge Test Circuit
Figure 4: Switching Waveforms
Figure 6: Diode Recovery Times Waveform
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In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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ISOWATT218 MECHANICAL DATA
DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP.
MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1
MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3
MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083
MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091
9
0.354
4.6 3.5 3.7 0.138
0.181 0.146
- Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m
P025C/A
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Table 11: Revision History
Date 17-Nov-2005 Revision 1 First Release Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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